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This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device)
For CCD output circuits Features
Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
Package
Code SSMini6-F3-B Name Pin 1: Emitter 2: Base 3: Gate
Basic Part Number
DSC2G03 + CCD load device (Individual)
4: Source 5: Drain 6: Collector
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Marking Symbol: X1 Internal Connection
Unit V V V mA V mA mW C C
(C) 6 (D) 5 (S) 4
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current CCD Limiting element voltage load device Limiting element current Total power dissipation * Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Vmax Imax PT Tj Tstg Rating 30 20 3 50 40 10 125 150 -55 to +150
Tr
FET
1 (E)
2 (B)
3 (G)
Note) *: Measuring on substrate at 17 mm x 10 mm x 1 mm
Electrical Characteristics Ta = 25C3C
Tr1 Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Symbol VCBO VEBO VBE hFE fT Conditions IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 15 mA 100 1 300 Min 30 3 750 250 Typ Max Unit V V mV MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
CCD load device Parameter Pinchi off current Output impedance Symbol IP ZO Conditions VDS = 8 V, VG = 0 VDS = 8 V, VG = 0 Min 5.0 0.02 Typ Max 7.0 Unit mA mW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2010 Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Common characteristics chart DMS935E2_PT-Ta PT Ta
150
Total power dissipation PT (mW)
125 100 75 50 25 0
0
40
80
120
160
200
Ambient temperature Ta (C)
Characteristics charts of Tr DMS935E2(Tr1)_IC-VCE IC VCE
60 50 Ta = 25C 500 550 A 450 A 350 A 650 A 750 A 850 A 250 A 30 150 A 20 10 0 50 A
DMS935E2(Tr1)_hFE-IC
DMS935E2(Tr1)_VCEsat-IC
hFE IC
Collector-emitter saturation voltage VCE(sat) (V)
VCE = 10 V 10
VCE(sat) IC
IC / IB = 30
Forward current transfer ratio hFE
Collector current IC (mA)
400
40 IB = 950 A
1
300 Ta = 85C 200 25C -30C 100
Ta = 85C 10-1 -30C 25C 10-2 10-1 1 10 102
0
2
4
6
8
10
12
0 10-1
1
10
102
Collector-emitter voltage VCE (V)
DMS935E2(Tr1)_IC-VBE
Collector current IC (mA)
DMS935E2(Tr1)_Cob-VCB
Collector current IC (mA)
DMS935E2(Tr1)_fT-IC
IC VBE
Collector output capacitance (Common base, input open circuited) Cob (pF)
50 VO = 10 V 3.0 2.5 2.0 1.5 1.0 0.5 0
Cob VCB
IE = 0 f = 1 MHz Ta = 25C 2 000 VCE = 10 V Ta = 25C
fT IC
Collector current IC (mA)
40 Ta = 85C 30 25C
20 -30C 10
Transition frequency fT (MHz)
1 500
1 000
500
0
0
0.4
0.8
1.2
1
10
100
0 10-1
1
10
102
Base-emitter voltage VBE (V)
Collector-base voltage VCB (V)
Collector current IC (mA)
2
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Characteristics charts of CCD DMS935E2(CCD)_IP-VDS IP VDS
8
Ta = 25C
Pinchi off current IP (mA)
6
4
2
0
0
5
10
15
20
25
30
Drain-source voltage VDS (V)
Ver. BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
SSMini6-F3-B
Unit: mm
0.20 -0.02 6 5
+0.05
4
1.20 0.05
1.60 0.05
1
2 (0.5)
3 (0.5)
(5)
0.13 -0.02
1.00 0.05 (0.27) (5)
4
0 to 0.05
Ver. BED
0.55 0.05
0.20 0.05
+0.05
1.60 0.05
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202

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